Everspin Technologies Inc. is a leading provider of magnetoresistive random access memory (MRAM) solutions. The company was founded in 2008 and is headquartered in Chandler, Arizona. Everspin is the world's first and largest supplier of MRAM, which is a type of non-volatile memory that combines the speed of static random access memory (SRAM) with the non-volatility of flash memory. Everspin's MRAM solutions are used in a wide range of applications, including industrial, automotive, and enterprise storage. The company's products are designed to provide high performance, low power consumption, and high endurance, making them ideal for use in mission-critical applications. Everspin's MRAM solutions are based on its proprietary Spin-Torque Transfer (STT) technology, which enables high-density memory arrays with low power consumption and high endurance. The company's products are available in a variety of form factors, including discrete chips, modules, and integrated circuits. Everspin has a strong intellectual property portfolio, with over 600 patents and patent applications worldwide. The company has also established partnerships with leading semiconductor companies, including GlobalFoundries, TSMC, and TowerJazz, to manufacture its MRAM products. In addition to its MRAM solutions, Everspin also offers a range of design and integration services to help customers incorporate its products into their systems. The company's engineering team has extensive experience in MRAM design and integration, and can provide customized solutions to meet specific customer requirements. Overall, Everspin Technologies Inc. is a leading provider of MRAM solutions, with a strong intellectual property portfolio and a track record of successful partnerships with leading semiconductor companies. The company's products are designed to provide high performance, low power consumption, and high endurance, making them ideal for use in mission-critical applications.

>MR25H256ACDF
:MR25H256ACDF
:Memory
11
>MR25H256CDF
:MR25H256CDF
:Memory
15.96
>MR25H40DF
:MR25H40DF
:Memory
29.22
>MR25H40CDF
:MR25H40CDF
:Memory
38.14
>MR2A08AYS35
:MR2A08AYS35
:Memory
53.66
>MR2A08ACYS35
:MR2A08ACYS35
:Memory
57.56
>MR4A08BCMA35
:MR4A08BCMA35
:Memory
100.42
>MR5A16ACMA35
:MR5A16ACMA35
:Memory
143.78
>MR5A16ACYS35
:MR5A16ACYS35
:Memory
143.78
>MR2A16AMA35
:MR2A16AMA35
:Memory
53.58
>MR4A08BMA35
:MR4A08BMA35
:Memory
87.3
>MR25H128ACDF
:MR25H128ACDF
:Memory
9.4
>MR1A16AYS35
:MR1A16AYS35
:Memory
38.1
>MR1A16ACMA35
:MR1A16ACMA35
:Memory
39.08
>MR1A16AVYS35
:MR1A16AVYS35
:Memory
42.52

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